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| 6MBP150RA060 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 150A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 450 500 400 600 150 300 150 595 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms Duty=58.8% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF Condition VCE=600V input terminal open Ic=150A -Ic=150A Min. - - - Typ. - - - Max. 1.0 2.8 3.0 Unit mA V V 6MBP150RA060 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100C *7 3 18 fsw=0 to 15kHz Tc=-20 to 100C *7 10 65 ON 1.00 1.35 1.70 OFF 1.25 1.60 1.95 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125C 225 Tj=25C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25C Fig.3 12 1425 1500 1575 Unit mA mA V V V C C C C A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=150A, VDC=300V IF=150A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Definition of tsc Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.21 0.47 Unit C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 400 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 6MBP150RA060 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 6MBP150RA060 Characteristics (Representative) Control circuit IGBT-IPM Power supply current vs. Switching frequency Tj=100C 40 35 N-side ********* P-side 2.5 Input signal threshold voltage vs. Power supply voltage Tj=25C ********* Tj=125C Power supply current Icc (mA) 2.0 30 25 20 15 10 5 0 0 5 10 15 20 25 0 12 13 14 15 16 17 18 Input signal threshold voltage Vin (ON), Vin (OFF), (V) Switching frequency fsw (kHz) 1.5 1.0 0.5 Power supply voltage Vcc (V) Undervoltage vs. Junction temperature 14 1.0 Undervoltage hysterisis vs. Junction temperature Undervoltage hysterisis VH (V) 12 0.8 10 Undervoltage VUVT (V) 0.6 8 6 0.4 4 0.2 2 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 0 Junction temperature Tj (C) Junction temperature Tj (C) Alarm hold time vs. Power supply voltage 3.0 200 Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC Alarm hold time tALM (msec.) 2.5 Overheating protection TCOH,TjOH (C) OH hysterisis TCH,TjH (C) 13 14 15 16 17 18 150 2.0 1.5 100 1.0 50 0.5 0 12 0 12 13 14 15 16 17 18 Power supply voltage Vcc (V) Power supply voltage Vcc (V) 6MBP150RA060 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 300 300 Collector current vs. Collector-Emitter voltage Tj=125C 250 250 Collector current Ic (A) 150 Collector current Ic (A) 0 1 2 3 4 200 200 150 100 100 50 50 0 0 0 1 2 3 4 Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V) Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25C Switching time ton, toff (nsec.) Switching time ton, toff (nsec.) Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125C 1000 1000 100 100 0 50 100 150 200 250 0 50 100 150 200 250 Collector current IC (A) Collector current IC (A) Forward current vs. Forward voltage 300 Reverse recovery characteristics trr, Irr, vs. IF 250 Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) 0 1 2 3 4 100 Forward current IF (A) 200 150 100 50 10 0 0 50 100 150 200 250 Foeward voltage VF (V) Foeward current IF (A) 6MBP150RA060 Inverter IGBT-IPM Transient thermal resistance 1500 1350 1200 Reverse biased safe operating area Vcc=15V, Tj <125C = Thermal resistance Rth(j-c) (C/W) 1 Collector current Ic (A) 0.01 0.1 1 1050 900 750 600 450 300 150 0.1 0.01 0.001 0 0 100 200 300 400 500 600 700 Pulse width Pw (sec.) Collector-Emitter voltage VCE (V) Power derating for IGBT (per device) 700 300 Power derating for FWD (per device) Collector power dissipation Pc (W) 600 Collector power dissipation Pc (W) 0 20 40 60 80 100 120 140 160 250 500 200 400 150 300 100 200 100 50 0 0 0 20 40 60 80 100 120 140 160 Case temperature Tc (C) Case temperature Tc (C) Switching loss vs. Collector current Edc=300V, Vcc=15V, Tj=25C 30 30 Switching loss vs. Collector current Edc=300V, Vcc=15V, Tj=125C Switching loss Eon,Eoff,Err (mJ/cycle) Switching loss Eon,Eoff,Err (mJ/cycle) 25 25 20 20 15 15 10 10 5 5 0 0 50 100 150 200 250 0 0 50 100 150 200 250 Collector current Ic (A) Collector current Ic (A) 6MBP150RA060 IGBT-IPM Overcurrent protection vs. Junction temperature Vcc=15V 420 Overcurrent protection level Ioc (A) 360 300 240 180 120 60 0 0 20 40 60 80 100 120 140 Junction temperature Tj (C) |
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